Description:
Reference #: 1714
The University of South Carolina is offering licensing opportunities for UV responsivity in self-biased diamond/4H-SiC heterojunction Schottky diodes.
Background:
The increasing demand for robust, efficient, and reliable detection systems in harsh environments, such as those found in nuclear applications and medical imaging, has necessitated the exploration of advanced materials and technologies. Among these, the 4H-SiC (silicon carbide) epilayer-based detector emerges as a promising alternative to traditional Silicon Photomultiplier (SiPM) and Photomultiplier Tube (PMT) setups coupled with scintillators, particularly due to its radiation hardness and low power requirements. The recent advent of high-performing self-biased UV detectors has significantly enhanced the prospects for such applications.
Invention Description:
This innovative detector design leverages the unique properties of 4H-SiC to offer superior performance in demanding conditions, where conventional systems often fall short. This design incorporates a thin, ultraviolet (UV) transparent layer of nanocrystalline boron-doped diamond (BDD) to high-quality 4H-SiC epitaxial layers. The result is outstanding UV detection performance in self-biased BDD/4H-SiC heterojunction Schottky barrier devices (HSBD).
Potential Applications:
This invention addresses outstanding challenges in harsh environment applications such as space/planetary radiation detection and monitoring radiation levels in nuclear core reactors. It can also be applied in high-energy physics research and medical imaging devices.
Advantages and Benefits:
This invention opens new research avenues in nuclear power production security, non-proliferation, high-energy physics research, medical imaging devices