Search Results - krishna+mandal

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UV responsivity in self-biased diamond/4H-SiC heterojunction Schottky diodes

Reference #: 1714 The University of South Carolina is offering licensing opportunities for UV responsivity in self-biased diamond/4H-SiC heterojunction Schottky diodes. Background: The increasing demand for robust, efficient, and reliable detection systems in harsh environments, such as those found in nuclear applications and medical imaging, has...

Published: 2/17/2026 | Inventor(s): Krishna Mandal

Keywords(s):

Category(s): Engineering and Physical Sciences

Self-biased 4H-SiC MOS devices for radiation detection

Reference #: 01614 The University of South Carolina is offering licensing opportunities for Self-biased 4H-SiC MOS devices for radiation detection. Background: 4H-Silicon Carbide has a unique combination of physical properties such as excellent carrier transport properties, high breakdown voltage, high displacement threshold, high thermal conductivity,...

Published: 12/3/2025 | Inventor(s): Krishna Mandal, Sandeep Chaundhuri

Keywords(s): Epitaxial layers, MOS devices, pulsed laser deposition, radiation detectors, silicon carbide (4H-SiC), yttrium oxide (Y2O3)

Category(s): Energy, Engineering and Physical Sciences, Environmental and Sustainability

Functional Coatings for Enhanced Tamper Indication

Reference #: 00973 Background: Laser surface authentication (LSA) is a key process in seal verification and allows for unique identification of inorganic objects, much like a fingerprint. Therefore, it is imperative that all materials, surface preparations and potential coatings being developed are compatible with this technique. Like a fingerprint,...

Published: 6/8/2023 | Inventor(s): Krishna Mandal, Adrian Mendez Torres, Kyle Brinkman

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Category(s): Energy, Software and Computing, Engineering and Physical Sciences

Schottky Barrier Detection Devices Having a 4H-SiC n-Type Epitaxial Layer

Reference #: 1048 The University of South Carolina is offering licensing opportunities for a highly sensitive detector for low-energy x-rays, gamma rays, and high-energy particles. Invention Description: The subject invention is a detection device formed from Schottky diodes on 4H-SiC n-type epitaxial layers. It detects low-energy x-rays (50 eV to...

Published: 4/4/2017 | Inventor(s): Krishna Mandal, J. Russell Terry

Keywords(s):

Category(s): Engineering and Physical Sciences