In-situ deposition of oxide passivation layer on III-Nitride based HEMT



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Reference #: 01623

The University of South Carolina is offering licensing opportunities for in-situ deposition of oxide passivation layer on III-Nitride based HEMT


The passivation layers on III-Nitride-based high electron mobility transistors (HEMTs) are essential for realizing high breakdown voltage and low leakage current applications. This innovation describes a method to achieve low interfacial charge density by in-situ gate oxide-dielectric deposition on III-Nitride-based HEMT structures grown in the same reactor. The method may include the growth of the complete device structure from the substrate to the gate dielectric in a single process run without breaking the vacuum or exposing samples to air. This process enables the improved performance of the HEMT devices with gate dielectric with low interfacial charge density. The method may use techniques like metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), a combination of these techniques, and other growth processes.

Invention Description:

In-situ deposition of oxide passivation layer on III-Nitride based HEMT will simplify the device fabrication process, by reducing multi deposition tool dependency. It will also improve the performance of the devices making it adoptable for varieties of application from electric vehicle to devices for extreme environment.

Potential Applications:

Currently, the oxide deposition for GaN/AlGaN based high electron mobility transistors is done in different deposition tools, which creates additional steps as well as a high interfacial charge density at the oxide and barrier layer interface. Multi tool dependency increases per unit cost of the devices, whereas high interfacial charges can reduce the device performance. This innovation simplifies the fabrication process by reducing time and limiting it to a single tool.

Advantages and Benefits:

The proposed process simplifies the fabrication process by making it a single tool dependent. In this process, the interfacial charge density is low, compared to the multi-step process.


For licensing information contact:

UofSC Technology Commercialization Office-

Patent Information:
For Information, Contact:
Technology Commercialization
University of South Carolina
Iftikhar Ahmad
Samiul Hasan
Mohi Uddin Jewel
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