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In-situ deposition of oxide passivation layer on III-Nitride based HEMT
Reference #: 01623
The University of South Carolina is offering licensing opportunities for in-situ deposition of oxide passivation layer on III-Nitride based HEMT
Background:
The passivation layers on III-Nitride-based high electron mobility transistors (HEMTs) are essential for realizing high breakdown voltage and low leakage current applications....
Published: 9/2/2026
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Updated: 4/10/2023
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Inventor(s): Iftikhar Ahmad, Samiul Hasan, Mohi Uddin Jewel
Keywords(s):
Category(s): Chemistry and Biochemistry
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