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Nondestructive Defect Delineation in SiC Wafers Using Optical Stress Technique
Reference #: 00367
The University of South Carolina is offering licensing opportunities for this technology
Invention Description:
This invention is cost-effective, rapid, and nondestructive characterization technique, which can be used for fast and routine SiC wafer-scale evaluation of structural and crystallographic defects. The technique employed...
Published: 7/10/2026
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Updated: 8/13/2012
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Inventor(s): Tangali Sudarshan, Xianyun Ma, Toshiro Kubota, Parag Talekar, Matthew Parker
Keywords(s):
Category(s): Engineering and Physical Sciences
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