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A Method of Eliminating Forward Voltage Drift in SiC PiN and PN Diodes
Reference #: 00385
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Invention Description:
This invention is a novel method for fabricating SiC PiN and PN diodes that do not experience voltage drift during operation. This new process involves the formation of a linearly graded, deep pn junction resulting...
Published: 7/10/2026
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Updated: 8/16/2012
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Inventor(s): Tangali Sudarshan, Stanislav Soloviev, Ying Gao
Keywords(s):
Category(s): Engineering and Physical Sciences, Energy
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