|
New Approach For Fabricating N-polar AlxGa1-xN Devices
Reference #: 01435
The University of South Carolina is offering licensing opportunities for a new approach for N-polar AlxGa1-xN Devices.
Background:
A high electron mobility transistor (HEMT) is a transistor that uses an electric field to control the flow of current, which incorporates a junction between two materials with different band gaps where...
Published: 10/8/2025
|
Updated: 9/4/2022
|
Inventor(s): Asif Khan
Keywords(s): High Voltage Transistors, N-polar AlxGa1-xN, Power Electronics
Category(s): Engineering and Physical Sciences
|
|
Transfer of Wide and Ultrawide Bandgap Layers to Engineered Substrate
Reference #: 01577
The University of South Carolina is offering licensing opportunities for Transfer of Wide and Ultrawide Bandgap Layers to Engineered Substrate
Background:
The intrinsic properties of both wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductor materials make them suitable for a wide range of other applications in high power...
Published: 7/10/2026
|
Updated: 8/30/2022
|
Inventor(s): Asif Khan, M.V.S. Chandrashekhar, MD Alam, Mikhail (Mike) Gaevski
Keywords(s): Flexible electronics, high-power electronics, Laser liftoff, Mechanical transfer, Thermal management
Category(s): Energy, Engineering and Physical Sciences
|
|
Deep-scaling of deep ultraviolet micro-sized emitters and modular interconnection thereof
Reference #: 01529
The University of South Carolina is offering licensing opportunities for Deep scaling of deep ultraviolet micro-sized emitters and modular interconnection thereof.
Background:
One of the main problems with deep ultraviolet (DUV) light-emitting diodes (LEDs) is that they get hot while they are operating, limiting the amount of power...
Published: 7/10/2026
|
Updated: 9/23/2021
|
Inventor(s): Asif Khan, Richard Floyd, Mikhail (Mike) Gaevski, M.V.S. Chandrashekhar, Grigory Simin
Keywords(s): AlGaN LED, DUV LED, light output power, micro-LED, micropixel LED, micro-sized LED, Size-dependence of spectral stability, Thermal management, ultraviolet LED, UVC LED
Category(s): Energy, Engineering and Physical Sciences
|
|
N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices
Reference #: 01434
The University of South Carolina is offering licensing opportunities for new approaches for fabricating N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices.
Background:
A high electron mobility transistor (HEMT) is a transistor that uses an electric field to control the flow of current, which incorporates a junction...
Published: 1/28/2026
|
Updated: 5/13/2021
|
Inventor(s): Asif Khan
Keywords(s): High Electron Mobility Transistors (HEMT), Light Emitting Diode, Non-polar substrates, Power Electronics
Category(s): Engineering and Physical Sciences
|
|
Selectively Doped III-nitride High Electron Mobility Transistor
Reference #: 00934Background:University of South Carolina (USC) has pioneered the development of AlInGaN based insulating gate heterojunction field-effect-transistors. This includes AlGaN (barrier)/GaN (channel), AlGaN (barrier)/InGaN (channel) and AlInGaN (lattice matched barrier)/GaN (channel) devices. In addition, the University was the first to...
Published: 7/10/2026
|
Updated: 2/16/2018
|
Inventor(s): Asif Khan, Qhalid Fareed, Vinod Adivarahan
Keywords(s):
Category(s): Engineering and Physical Sciences
|