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A Method to Increase and Control Carrier Lifetime in SiC
Reference #: 00694
Invention Description:
This invention is a method to use Silicon Carbide (SiC) epilayers for bipolar devices, which gives the user control of the carrier lifetime.
Background:
Until now, there has been no method for controlling or improving the carrier lifetime using the Chemical Vapor Deposition (CVD). Carrier lifetime...
Published: 7/10/2026
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Updated: 7/9/2012
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Inventor(s): Tangali Sudarshan, Amitesh Shrivastava
Keywords(s):
Category(s): Engineering and Physical Sciences
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