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N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices
Reference #: 01434
The University of South Carolina is offering licensing opportunities for new approaches for fabricating N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices.
Background:
A high electron mobility transistor (HEMT) is a transistor that uses an electric field to control the flow of current, which incorporates a junction...
Published: 1/28/2026
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Updated: 5/13/2021
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Inventor(s): Asif Khan
Keywords(s): High Electron Mobility Transistors (HEMT), Light Emitting Diode, Non-polar substrates, Power Electronics
Category(s): Engineering and Physical Sciences
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